Journal article
Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium
M Radek, H Bracht, BC Johnson, JC McCallum, M Posselt, B Liedke
Applied Physics Letters | AMER INST PHYSICS | Published : 2015
DOI: 10.1063/1.4929839
Abstract
The atomic mixing of matrix atoms during solid-phase epitaxy (SPE) is studied by means of isotopically enriched germanium (Ge) multilayer structures that were amorphized by Ge ion implantation up to a depth of 1.5μm. Recrystallization of the amorphous structure is performed at temperatures between 350°C and 450°C. Secondary-ion-mass-spectrometry is used to determine the concentration-depth profiles of the Ge isotope before and after SPE. An upper limit of 0.5nm is deduced for the displacement length of the Ge matrix atoms by the SPE process. This small displacement length is consistent with theoretical models and atomistic simulations of SPE, indicating that the SPE mechanism consists of bon..
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Awarded by Deutsche Forschungsgemeinschaft
Funding Acknowledgements
The authors thank TASCON GmbH in Munster for SIMS measurements, E. E. Haller from Lawrence Berkeley National Laboratory (CA, USA) for providing the Ge isotopes. The MBE growth of the Ge isotope structure and of the B-doped delta layers were performed by J. Lundsgaard Hansen and A. Nylandsted Larsen (University of Aarhus, Denmark) and by D. Bougeard (University of Regensburg, Germany). The ion implantations were done by S. Akhmadaliev at the Helmholtz-Zentrum Dresden-Rossendorf. The work was funded by the Deutsche Forschungsgemeinschaft under Grant Nos. BR 1520/14-1 and PO 436/6-1 as well as an individual Grant No. BR 1520/10-2 within the Heisenberg program for H.B.