Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium
M Radek, H Bracht, BC Johnson, JC McCallum, M Posselt, B Liedke
Applied Physics Letters | AMER INST PHYSICS | Published : 2015
Awarded by Deutsche Forschungsgemeinschaft
Awarded by Heisenberg program
The authors thank TASCON GmbH in Munster for SIMS measurements, E. E. Haller from Lawrence Berkeley National Laboratory (CA, USA) for providing the Ge isotopes. The MBE growth of the Ge isotope structure and of the B-doped delta layers were performed by J. Lundsgaard Hansen and A. Nylandsted Larsen (University of Aarhus, Denmark) and by D. Bougeard (University of Regensburg, Germany). The ion implantations were done by S. Akhmadaliev at the Helmholtz-Zentrum Dresden-Rossendorf. The work was funded by the Deutsche Forschungsgemeinschaft under Grant Nos. BR 1520/14-1 and PO 436/6-1 as well as an individual Grant No. BR 1520/10-2 within the Heisenberg program for H.B.