Constant capacitance deep-level transient spectroscopy study of bulk traps in interface states in P implanted Si MOS capacitors Full Written Papers Refereed uri icon

Overview

Time

Date/time value

  • 2005

Additional Document Info

Parent Title

  • 2004 Conference on Optoelectronic and microelectronic materials and devices
  • COMMAD 04 Proceedings

Publisher

  • IEEE - Institute of Electrical and Electronic Engineers