Modeling the effect of hydrogen infiltration on the asymmetry in arsenic-enhanced solid phase epitaxy in silicon Journal Articles Refereed uri icon

Overview

Published in

  • Journal of Applied Physics

Time

Date/time value

  • 2004

Identity

Digital Object Identifier (DOI)

  • 10.1063/1.1768616

Additional Document Info

Parent Title

  • Journal of Applied Physics

Volume

  • 96

Issue

  • 4

Publisher

  • American Institute of Physics