Minimisation of spanning dislocations in the crystallisation of deep amorphous silicon wells through the alignment of volume edges with fast growth directions Journal Articles Refereed uri icon

Overview

Published in

  • Materials Science and Engineering B

Time

Date/time value

  • 2003

Identity

Digital Object Identifier (DOI)

  • 10.1016/S0921-5107(02)00573-1

Additional Document Info

Parent Title

  • Materials Science and Engineering B

Volume

  • 97

Publisher

  • Elsevier Science