Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon Journal Articles Refereed uri icon

Overview

Published in

  • Journal of Applied Physics

Time

Date/time value

  • 2012

Identity

Digital Object Identifier (DOI)

  • 10.1063/1.4710991

Additional Document Info

Parent Title

  • Journal of Applied Physics

Volume

  • 111

Issue

  • 9

Number

  • 094910

Publisher

  • American Institute of Physics