Prediction of Random Dopant Induced Threshold Voltage Fluctuations in N anoCMOS Transistors Simulation of Semiconductor Processes and Devices Full Written Papers Refereed uri icon

Overview

Time

Date/time value

  • 2008

Additional Document Info

Parent Title

  • Simulation of Semiconductor Processes and Devices
  • Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on. Proceedings

Publisher

  • IEEE Computer Society