Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation Journal Articles Refereed uri icon

Overview

Published in

  • Applied Physics Letters

Time

Date/time value

  • 2010

Identity

Digital Object Identifier (DOI)

  • 10.1063/1.3458783

Additional Document Info

Parent Title

  • APPLIED PHYSICS LETTERS

Volume

  • 96

Issue

  • 26

Number

  • ARTN 264102

Publisher

  • American Institute of Physics