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DR BRETT JOHNSON



Contact Details

Organization: Physics
Position: RESEARCH FELLOW MATERIALS DEVELOPMENT QUANTUM COMP
Email:
Work: 83445077
Room: N210
Level: 02
Building: Physics Building
Campus: Parkville

Qualifications, Honours, Fellowships and Other Awards

Qualifications

Title Institution Date Awarded Abbreviation
Doctor of Philosophy University of Melbourne 01-Mar-2004
Bachelor of Science University of Melbourne

Government Research Classifications

Research Fields, Courses and Discipline Classifications

Socio-Economic Objective Classifications

Grants and Contracts

Research Grants, Contracts and Consultancies awarded to the University of Melbourne as the administering institution (since 2003) as recorded in Themis Agreements.

Grants

Title Role Funding Source Scheme Award Date
Dopant-enhanced hydrogen diffusion during solid phase epitaxial re-crystallization of surface amorphous silicon layers Chief Investigator AINSE Awards 01/01/2008

Publications

Publications produced at the University of Melbourne and reported in the Annual Publications Collection and 'Research Report' since 2001. The Themis Publications module, released in November 2006, allows additional publications from previous institutions and publications from past years to be entered.

Publications in 2009

Journal Articles

  • Dopant enhanced H diffusion in amorphous silicon and its effect on the kinetics of solid phase epitaxy
    Year: 2009
    Journal: Materials Science and Engineering B
    Volume: 157
    Page numbers: 6-10
    Author(s):
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  • Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation
    Year: 2009
    Journal: Applied Physics Letters
    Volume: 95
    Page numbers: 1019111-1019113
    Author(s):
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Publications in 2008

Journal Articles

  • Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium
    Year: 2008
    Journal: Physical Review B
    Volume: 77
    Page numbers: 2141091-21410912
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Conference Publications/Papers

  • Dislocation related band-edge photoluminescence in boron-implanted silicon


    Year: 2008
    Event name: ICONN 2008
    Conference Publication: Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology
    Page numbers: 214-217
    Publisher: IEEE Press(Melbourne)
    Author(s):
    Editor(s):

  • Intrinsic and dopant-enhanced solid phase epitaxy in amorphous Germanium


    Year: 2008
    Event name: Doping Engineering for Front-End Processing
    Conference Publication: Materials Research Society Symposium Proceedings
    Volume: 1070
    Page numbers: E05-061-E05-066
    Publisher: Materials Research Society(Pennsylvania)
    Author(s):
    Editor(s):
  • Boron enhanced H diffusion in amorphous Si formed by ion implantation
    Year: 2008
    Event name: Doping Engineering for Front-End Processing
    Conference Publication: Materials Research Society Symposium Proceedings
    Volume: 1070
    Page numbers: E05-051-E05-056
    Publisher: Materials Research Society(Pennsylvania)
    Author(s):
    Editor(s):

Publications in 2007

Journal Articles

  • Dopant-enhanced solid-phase epitaxy in buried amorphous silicon layers
    Year: 2007
    Journal: Physical Review B
    Volume: 76
    Page numbers: 0452161-04521612
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Publications in 2004

Journal Articles

  • Ion-channeling and Raman scattering study of damage accumulation in silicon
    Year: 2004
    Journal: Journal of Applied Physics
    Volume: 95
    Issue: 3
    Page numbers: 1096-1101
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  • Kinetics of arsenic-enhanced solid phase epitaxy in silicon
    Year: 2004
    Journal: Journal of Applied Physics
    Volume: 95
    Issue: 8
    Page numbers: 4427-4431
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  • Modeling the effect of hydrogen infiltration on the asymmetry in arsenic-enhanced solid phase epitaxy in silicon
    Year: 2004
    Journal: Journal of Applied Physics
    Volume: 96
    Issue: 4
    Page numbers: 2381-2385
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Publications in 2002

Journal Articles

  • Collapse of nanocavities studied by ion-channeling and Raman spectroscopy
    Year: 2002
    Journal: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume: 190
    Page numbers: 602-605
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Conference Publications/Papers

  • Ion channelling and Raman scattering study of self-implanted silicon


    Year: 2002
    Event name: 2002 Conference on Optoelectronic and Microelectronic Materials and Devices
    Conference Publication: COMMAD 2002 Proceedings
    Page numbers: 429-432
    Publisher: Institute of Electrical and Electronics Engineers(New Jersey)
    Author(s):
    Editor(s):
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