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DR JEFFREY MCCALLUM



Contact Details

Organization: Physics
Position: S. LECTURER IN CONDENSED MATTER PHYSICS
Email:
Homepage: http://www.ph.unimelb.edu.au/marc/contact/academics.htm
Work: 8344 8072
Fax: 9347 4783
Room: 205
Level: 02
Building: Physics Building
Campus: Parkville

Biography

Dr McCallum is a Senior Lecturer in The School of Physics at The University of Melbourne. He is a program manager of the Materials Program of the ARC Centre of Excellence for Quantum Computer Technology and in 2008 became Director of the Microanalytical Research Centre and. He has twenty years experience in ion beam processing of semiconductors and ceramics and ion beam analysis of materials. His Ph.D, conferred in 1989, was concerned with microbeam analysis of semiconductor structures. At that time, Dr McCallum introduced the imaging technique of channeling contrast microscopy, which is now widely used in microbeam facilities for analysis of crystalline regions in a variety of materials. Dr. McCallum has held a postdoctoral appointment at Oak Ridge National Laboratory from 1988−89 where he worked on ion implantation and annealing behaviour of sapphire and other ceramics and was the first to demonstrate application of time resolved reflectivity to measurement of crystallisation kinetics of ceramics. He continued this research when he was awarded an International Fellowship by the National Science and Engineering Research Council of Canada in 1990 to work at The University of Western Ontario where he performed the first dynamic annealing studies of crystallisation of amorphous and gamma Al2O3 layers using the reflectivity technique. He has made several key contributions to research into dopant and impurity effects in the solid-state amorphous to crystalline transformation of silicon termed solid-phase epitaxy (SPE). In particular he has studied the effects of hydrogen on the process and has contributed to development of an advanced model of the crystallisation process. He is currently studying the interaction between hydrogen and dopant atoms during SPE. He has set up a deep level transient spectroscopy laboratory at The University of Melbourne and has contributed to the understanding of the effect of ion channelling on the defects formed in silicon during ion implantation. He has also examined the effect of ion implantation and rapid thermal annealing on the density of charge traps at the interface between a high-quality thermal SiO2 layer and the silicon substrate and has contributed to the development of processing techniques which yield very low trap densities suitable for solid-state quantum computer development. Since 1993, he has supervised four Ph.Ds and one M.Sc that have been awarded on topics related to this proposal. He has held a Visiting Fellow position with the Department of Electronic Material Engineering at ANU since 1994 and is skilled in the operation of ion implantation facilities.

Research Expertise and International Linkages

Research Expertise

Research Interest Key Words Country of Expertise
Epitaxy and defect studies in silicon Semi-conductor physics disorder defects and amorphisation, open volume defects, ion implantation, solid phase epitaxial growth, shallow junctions Australia, United States of America, Canada

International Linkages

Country Establishment Collaboration
United States Harvard University Research
Canada University of Western Ontario Exchange, Research, Technical Assistance/Training
United States Axcelis Technologies Exchange, Research, Technical Assistance/Training

Qualifications, Honours, Fellowships and Other Awards

Qualifications

Title Institution Date Awarded Abbreviation
Bachelor of Science (Honours) University of Melbourne 31-Dec-1982
Doctor of Philosophy University of Melbourne 31-Dec-1989

Memberships

Membership Type Membership Body Description Start Date End Date
Member Materials Research Society Member 07-Apr-1986
Member Bomische Physical Society Member 21-May-1990

Other Awards

Award Type Awarding Body Comments Date Awarded
Other (Award) Australian Academy of Sciences 05-Feb-1996
Other (Award) Materials Research Society 07-Apr-1986

Government Research Classifications

Research Fields, Courses and Discipline Classifications

Socio-Economic Objective Classifications

Grants and Contracts

Research Grants, Contracts and Consultancies awarded to the University of Melbourne as the administering institution (since 2003) as recorded in Themis Agreements.

Grants

Title Role Funding Source Scheme Award Date
FUNDAMENTAL IMPLANTATION, EPITAXY AND DEFECT STUDIES IN SILICON TO SUPPORT ULTRA-SHALLOW JUNCTION FORMATION Chief Investigator AUST NATIONAL UNIVERSITY Discovery Projects (AUST RESEARCH COUNCIL) 01/01/2006
Dopant-enhanced hydrogen diffusion during solid phase epitaxial re-crystallization of surface amorphous silicon layers Chief Investigator AINSE Awards 01/01/2008
DEFECT-INDUCED LUMINESCENCE FROM ION-IMPLANTED SILICON: TOWARDS SILICON PHOTONICS APPLICATIONS Chief Investigator AUSTRALIAN NATIONAL UNIVERSITY Discovery Projects (AUST RESEARCH COUNCIL) 01/01/2009

Additional Grant and Contract Information

ARC QEII Fellow, School of Physics, University of Melbourne, 1996-2000 Received J.G. Russell Award from the Australian Academy of Sciences, 1996 Awarded International Fellowship by Natural Sciences and Engineering Research Council of Canada, 1990

Publications

Publications produced at the University of Melbourne and reported in the Annual Publications Collection and 'Research Report' since 2001. The Themis Publications module, released in November 2006, allows additional publications from previous institutions and publications from past years to be entered.

Publications in 2009

Journal Articles

  • Dopant enhanced H diffusion in amorphous silicon and its effect on the kinetics of solid phase epitaxy
    Year: 2009
    Journal: Materials Science and Engineering B
    Volume: 157
    Page numbers: 6-10
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  • Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation
    Year: 2009
    Journal: Applied Physics Letters
    Volume: 95
    Page numbers: 1019111-1019113
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  • Two-Level Ultrabright Single Photon Emission from Diamond Nanocrystals
    Year: 2009
    Journal: Nano Letters
    Volume: 9
    Issue: 9
    Page numbers: 3191-3195
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Publications in 2008

Journal Articles

  • Cathodoluminescence microanalysis of diamond nanocrystals in fused silicon dioxide
    Year: 2008
    Journal: Journal of Applied Physics
    Volume: 104
    Page numbers: 1135141-1135149
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  • Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium
    Year: 2008
    Journal: Physical Review B
    Volume: 77
    Page numbers: 2141091-21410912
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Conference Publications/Papers

  • Dislocation related band-edge photoluminescence in boron-implanted silicon


    Year: 2008
    Event name: ICONN 2008
    Conference Publication: Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology
    Page numbers: 214-217
    Publisher: IEEE Press(Melbourne)
    Author(s):
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  • Intrinsic and dopant-enhanced solid phase epitaxy in amorphous Germanium


    Year: 2008
    Event name: Doping Engineering for Front-End Processing
    Conference Publication: Materials Research Society Symposium Proceedings
    Volume: 1070
    Page numbers: E05-061-E05-066
    Publisher: Materials Research Society(Pennsylvania)
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  • A Study of the Activation of Ion Implanted Phosphorus Donors in Silicon Using ESR
    Year: 2008
    Event name: 'Wagga 2008
    Conference Publication: Proceedings of 'Wagga 2008: The 32nd Annual Condensed Matter and Materials Meeting
    Page numbers: 1-4
    Publisher: Australian Institute of Physics(Melbourne)
    Author(s):
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    URL - open access http://www.aip.org.au/wagga2008/
  • Boron enhanced H diffusion in amorphous Si formed by ion implantation
    Year: 2008
    Event name: Doping Engineering for Front-End Processing
    Conference Publication: Materials Research Society Symposium Proceedings
    Volume: 1070
    Page numbers: E05-051-E05-056
    Publisher: Materials Research Society(Pennsylvania)
    Author(s):
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  • Ion implantation through thin silicon dioxide layers for Si-based solid-state quantum computer device development
    Year: 2008
    Event name: Symposium I - Synthesis and Metrology of Nanoscale Oxides and Thin Films
    Conference Publication: Materials Research Society Symposium Proceedings
    Volume: 1074
    Page numbers: 112-051-112-056
    Publisher: Materials Research Society(Pennsylvania)
    Author(s):
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    URL - open access http://www.mrs.org/s_mrs/sec_subscribe.asp?SID=1&VID=111&CID=12440&DID=205515&RTID=0&CIDQS=&Taxonomy=False&specialSearch=False

Publications in 2007

Journal Articles

  • Angular dependence of defect formation in H-implanted silicon studied using deep level transient spectroscopy
    Year: 2007
    Journal: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume: 257
    Page numbers: 212-216
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  • Dopant-enhanced solid-phase epitaxy in buried amorphous silicon layers
    Year: 2007
    Journal: Physical Review B
    Volume: 76
    Page numbers: 0452161-04521612
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Conference Publications/Papers

  • An EPR study on the activation of low energy phosphorus ions implanted into silicon


    Year: 2007
    Event name: AINSE 2007
    Conference Publication: 15th Australian Conference on Nuclear and Complementary Techniques ofAnalysis & 9th Vacuum Society ofAustralia Congress proceedings
    Page numbers: 1-5
    Publisher: Australian Institute of Nuclear Science and Engineering(Lucas Hieghts)
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  • Characterisation of high quality, thermally grown silicon dioxide on silicon


    Year: 2007
    Event name: AINSE 2007
    Conference Publication: 15th Australian Conference on Nuclear and Complementary Techniques ofAnalysis & 9th Vacuum Society ofAustralia Congress proceedings
    Page numbers: 1-4
    Publisher: Australian Institute of Nuclear Science and Engineering(Lucas Hieghts)
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  • Interface trap density reduction in thin silicon oxides using ion implantation


    Year: 2007
    Event name: 15th Australian Conference on Nuclear and Complementary Techniques of Analysis & 9th Vacuum Society of Australia Congress
    Conference Publication: 15th Australian Conference on Nuclear and Complementary Techniques of Analysis & 9th Vacuum Society of Australia Congress Proceedings
    Page numbers: 73-76
    Publisher: Australian Institute of Nuclear Science and Engineering(Lucas Hieghts)
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Publications in 2006

Journal Articles

Publications in 2005

Journal Articles

Conference Publications/Papers

  • Constant capacitance deep-level transient spectroscopy study of bulk traps in interface states in P implanted Si MOS capacitors
    Year: 2005
    Event name: COMMAD 04 Proceedings
    Conference Publication: 2004 Conference on Optoelectronic and microelectronic materials and devices
    Page numbers: 113-116
    Publisher: IEEE - Institute of Electrical and Electronic Engineers(Piscataway)
    Author(s):
  • Formation of carbon nanoclusters by implantation of KeV carbon ions in fused silica followed by thermal annealing
    Year: 2005
    Event name: Micro- and nanotechnology: materials, processes, packaging, and systems II
    Conference Publication: Proceedings of SPIE
    Volume: 5650
    Page numbers: 35-43
    Publisher: SPIE - The International Society for Optical Engineering(Washington)
    Author(s):
  • Kelvin-probe force microscopy defect study of ion implanted thermal oxide thin films on silicon
    Year: 2005
    Event name: COMMAD 04 Proceedings
    Conference Publication: 2004 Conference on Optoelectronic and microelectronic materials and devices
    Page numbers: 405-408
    Publisher: IEEE - Institute of Electrical and Electronic Engineers(Piscataway)
    Author(s):

Publications in 2004

Journal Articles

  • Conditions for the formation of Ti3+ by ion implantation of a-axis α-A1203
    Year: 2004
    Journal: Materials Science and Engineering B
    Volume: 106
    Page numbers: 257-262
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  • Ion-channeling and Raman scattering study of damage accumulation in silicon
    Year: 2004
    Journal: Journal of Applied Physics
    Volume: 95
    Issue: 3
    Page numbers: 1096-1101
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  • Kinetics of arsenic-enhanced solid phase epitaxy in silicon
    Year: 2004
    Journal: Journal of Applied Physics
    Volume: 95
    Issue: 8
    Page numbers: 4427-4431
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  • Modeling the effect of hydrogen infiltration on the asymmetry in arsenic-enhanced solid phase epitaxy in silicon
    Year: 2004
    Journal: Journal of Applied Physics
    Volume: 96
    Issue: 4
    Page numbers: 2381-2385
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  • The potential for the fabrication of wires embedded in the crystalline silicon substrate using the solid phase segregation of gold in crystallising amorphous volumes
    Year: 2004
    Journal: Materials Science and Engineering B
    Volume: 108
    Page numbers: 227-240
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Conference Publications/Papers

  • Formation of Ti:sapphire via high temperature processing of Ti implanted sapphire crystals
    Year: 2004
    Event name: Proceedings of SPIE
    Conference Publication: Photonics: Design, Technology, and Packaging
    Volume: 5277
    Page numbers: 375-382
    Publisher: SPIE - The International Society for Optical Engineering(Washington)
    Author(s):

Publications in 2003

Journal Articles

  • Defective Crystal Recovered from the Crystallization of Potassium-Doped Amorphous Silicon Films
    Year: 2003
    Journal: Journal of the Electrochemical Society
    Volume: 150
    Issue: 4
    Page numbers: G266-G270
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  • Implantation angle dependent study of vacancy related defect profiles in ion implanted silicon
    Year: 2003
    Journal: Physica B
    Volume: 340-342
    Page numbers: 748-751
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  • Minimisation of spanning dislocations in the crystallisation of deep amorphous silicon wells through the alignment of volume edges with fast growth directions
    Year: 2003
    Journal: Materials Science and Engineering B
    Volume: 97
    Page numbers: 167-175
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  • Progress in silicon-based quantum computing
    Year: 2003
    Journal: Royal Society of London Philosophical Transactions. Mathematical, Physical and Engineering Sciences
    Volume: 361
    Page numbers: 1451-1471
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Publications in 2002

Journal Articles

  • Collapse of nanocavities studied by ion-channeling and Raman spectroscopy
    Year: 2002
    Journal: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume: 190
    Page numbers: 602-605
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  • Investigation of the environment of Cr ions implanted into sapphire
    Year: 2002
    Journal: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume: 190
    Page numbers: 533-537
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  • The effect of potassium on the rate of solid phase epitaxy in silicon
    Year: 2002
    Journal: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume: 190
    Page numbers: 777-781
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Conference Publications/Papers

  • A deep level transient spectroscopy study of vacancy-related defect profiles in channeled ion implanted silicon


    Year: 2002
    Event name: 2002 Conference on Optoelectronic and Microelectronic Materials and Devices
    Conference Publication: COMMAD 2002 Proceedings
    Page numbers: 437-440
    Publisher: Institute of Electrical and Electronics Engineers(New Jersey)
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  • Ion channelling and Raman scattering study of self-implanted silicon


    Year: 2002
    Event name: 2002 Conference on Optoelectronic and Microelectronic Materials and Devices
    Conference Publication: COMMAD 2002 Proceedings
    Page numbers: 429-432
    Publisher: Institute of Electrical and Electronics Engineers(New Jersey)
    Author(s):
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  • Progress towards a revolutionary quantum computer in silicon
    Year: 2002
    Event name: Australian Institute of Physics 15th Biennial Congress 2002
    Conference Publication: Proceedings of the Australian Institute of Physics 15th Biennial Congress 2002
    Page numbers: 1-3
    Publisher: Causal Publications(Sydney)
    Author(s):
  • Top-down nanofabrication of single-ion implanted silicon quantum computer devices
    Year: 2002
    Event name: Australian Institute of Physics 15th Biennial Congress 2002
    Conference Publication: Proceedings of the Australian Institute of Physics 15th Biennial Congress 2002
    Page numbers: 437-440
    Publisher: Causal Publications(Sydney)
    Author(s):

Publications in 2001

Journal Articles

  • Carbon diffusion and nanocrystalline diamond formation in carbon ion-implanted oxides studied by nuclear elastic scattering
    Year: 2001
    Journal: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume: 175-177
    Page numbers: 554-558
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  • Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation
    Year: 2001
    Journal: Journal of Materials Research
    Volume: 16
    Issue: 11
    Page numbers: 3229-3237
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  • Diamond nanocrystals formed by direct implantation of fused silica with carbon
    Year: 2001
    Journal: Journal of Applied Physics
    Volume: 90
    Issue: 6
    Page numbers: 3007-3018
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  • Si-doped luminescence gratings
    Year: 2001
    Journal: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume: 181
    Page numbers: 263-267
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  • Structural characterisation of Ti:sapphire regions formed by localised high-energy implantation of Ti and O ions
    Year: 2001
    Journal: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume: 181
    Page numbers: 372-376
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  • The crystallisation of deep amorphous wells in silicon produced by ion implantation
    Year: 2001
    Journal: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume: 175-177
    Page numbers: 164-168
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  • Ti:sapphire formation via the co-implantation of Ti and O ions into sapphire
    Year: 2001
    Journal: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume: 175-177
    Page numbers: 537-541
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Conference Publications/Papers

  • Diamond quantum dots fabricated by ion implantation


    Year: 2001
    Event name: 1st International Conference on Experimental Implementation of Quantum Computation
    Conference Publication: Proceedings of the 1st International Conference on Experimental Implementation of Quantum Computation
    Page numbers: 43-47
    Publisher: Rinton Press(New Jersey)
    Author(s):
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